? 2003 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1 ma 1200 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20 v dc , v ds = 0 100 na i dss v ds = 0.8 v dss t j = 25 c25 a v gs = 0 v t j = 125 c1ma r ds(on) v gs = 10 v, i d = 0.5 i d25 4.5 ? note 1 v dss i d25 r ds(on) 1200 v 3 a 4.5 ? ? ? ? ? n-channel enhancement mode avalanche rated, high dv/dt features z international standard packages z low r ds (on) z rated for unclamped inductive load switching (uis) z molding epoxies meet ul 94 v-0 flammability classification advantages z easy to mount z space savings z high power density high voltage power mosfets g s to-263 (ixta) g d s to-220 (ixtp) g = gate d = drain s = source tab = drain ixta 3n120 ixtp 3n120 d (tab) d (tab) symbol test conditions maximum ratings v dss t j = 25 c to 150 c 1200 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 1200 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c3a i dm t c = 25 c, pulse width limited by t jm 12 a i ar t c = 25 c3a e ar t c = 25 c 20mj e as 700 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 200 w t j -55 to +150 c t jm 150 c t stg -55 to +150 c t l 1.6 mm (0.063 in) from case for 10 s 300 c m d mounting torque (to-220) 1.13/10 nm/lb.in. weight to-220 4 g to-263 2 g ds98844d(05/03)
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 0.5 ? i d25 , note 1 1.5 2.6 s c iss 1100 1350 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 110 135 pf c rss 40 60 pf t d(on) 17 ns t r v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 15 ns t d(off) r g = 4.7 ? (external), 32 n s t f 18 ns q g(on) 42 nc q gs v gs = 10 v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 8nc q gd 21 nc r thjc 0.62 k/w r thck (to-220) 0.25 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 3 a i sm repetitive; pulse width limited by t jm 12 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f = i s , -di/dt = 100 a/ s, v r = 100 v 700 n s to-263 (ixta) outline 1. gate 2. drain 3. source 4. drain bottom side dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 pins: 1 - gate 2 - drain 3 - source 4 - drain bottom side to-220 (ixtp) outline notes: 1. pulse test, t 300 s, duty cycle d 2 % ixta 3n120 ixtp 3n120
? 2003 ixys all rights reserved ixta 3n120 ixtp 3n120 fig. 2. extended output characteristics @ 25 deg. c 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 v ds - volts i d - amperes v g s = 1 0v 5v 6v 7v fig. 3. output characteristics @ 125 deg. c 0 0.5 1 1. 5 2 2.5 3 0 5 10 15 2 0 2 5 v ds - volts i d - amperes v g s = 1 0v 7v 5v 6v fig. 1. output characteristics @ 25 deg. c 0 0.5 1 1. 5 2 2.5 3 02 4681012 v ds - volts i d - amperes v g s = 1 0v 7v 5v 6v fig. 4. r ds(on) normalized to i d25 value vs. junction temperature 0.4 0.7 1 1. 3 1. 6 1. 9 2.2 2.5 2.8 -50 -25 0 25 50 75 100 125 150 t j - degr ees centigr ade r d s (on) - normalize d i d = 3a i d = 1 .5a v g s = 1 0v fig. 6. drain current vs. case t emperature 0 0.5 1 1. 5 2 2.5 3 3.5 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) normalized to i d25 value vs. i d 0.7 1 1. 3 1. 6 1. 9 2.2 2.5 2.8 0 123 4567 i d - amperes r d s (on) - normalize d t j = 1 25 o c t j = 25 o c v g s = 1 0v
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 6,259,123b1 6,306,728b 1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065b1 6,162,665 6,534,343 ixta 3n120 ixtp 3n120 fig. 11. capacitance 10 10 0 1000 10000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - p f c iss c oss c rss f = 1 m hz fig. 10. gate charge 0 2 4 6 8 10 0 8 16 24 32 40 48 q g - nanocoulombs v g s - volts v d s = 600v i d = 1 .5a i g = 1 0ma fig. 7. input admittance 0 1 2 3 4 5 6 3.5 4 4.5 5 5.5 6 6.5 v gs - volts i d - amperes t j = 1 20 o c 25 o c -40 o c fig. 12. maximum t ransient t hermal resistance 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1 10 100 1000 pulse width - milliseconds r (th) j c - (oc/w) fig. 8. t ransconductance 0 1 2 3 4 5 6 7 8 0 1.5 3 4.5 6 7.5 9 i d - amperes g f s - siemens t j = -40 o c 25 o c 1 25 o c fig. 9. source current vs. source-to-drain voltage 0 1 2 3 4 5 6 7 8 9 0.4 0.5 0.6 0.7 0.8 0.9 v sd - volts i s - amperes t j = 1 25 o c t j = 25 o c
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